Journal
OPTICS LETTERS
Volume 35, Issue 19, Pages 3246-3248Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.35.003246
Keywords
-
Categories
Funding
- Defense Advanced Research Projects Agency (DARPA) MTO office [HR0011-08-9-0001]
Ask authors/readers for more resources
Fast, compact, and power-efficient silicon microcavity electro-optic modulators are expected to be critical components for chip-level optical interconnects. It is highly desirable that these modulators can be driven by voltage swings of 1 V or less to reduce power dissipation and make them compatible with voltage supply levels associated with current and future complementary metal-oxide-semiconductor technology nodes. Here, we present a silicon racetrack resonator modulator that achieves over 8 dB modulation depth at 12.5 Gbps with a 1 V swing. In addition, the use of a racetrack resonator geometry relaxes the tight lithography resolution requirements typically associated with microring resonators and enhances the ability to use common lithographic optical techniques for their fabrication. (C) 2010 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available