4.6 Article

Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation

Journal

OPTICS LETTERS
Volume 34, Issue 5, Pages 659-661

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OL.34.000659

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Funding

  1. Minstry of Education-Academic Research Fund
  2. Engineering and Physical Sciences Research Council [EP/F001428/1] Funding Source: researchfish
  3. EPSRC [EP/F001428/1] Funding Source: UKRI

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we have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1 x 10(15)/cm(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1 +/- 0.4 dB/cm and 1.2 +/- 0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications. (C) 2009 Optical Society of America

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