Journal
OPTICS EXPRESS
Volume 26, Issue 16, Pages 21324-21331Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.26.021324
Keywords
-
Categories
Funding
- Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB)
Ask authors/readers for more resources
Optoelectronic effects of sidewall passivation on micro-sized light-emitting diodes (mu LEDs) using atomic-layer deposition (ALD) were investigated. Moreover, significant enhancements of the optical and electrical effects by using ALD were compared with conventional sidewall passivation method, namely plasma-enhanced chemical vapor deposition (PECVD). ALD yielded uniform light emission and the lowest amount of leakage current for all mu LED sizes. The importance of sidewall passivation was also demonstrated by comparing leakage current and external quantum efficiency (EQE). The peak EQEs of 20 x 20 mu m(2) mu LEDs with ALD sidewall passivation and without sidewall passivation were 33% and 24%, respectively. The results from ALD sidewall passivation revealed that the size-dependent influences on peak EQE can be minimized by proper sidewall treatment. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available