Journal
OPTICS EXPRESS
Volume 26, Issue 18, Pages 23728-23739Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.26.023728
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Funding
- National Science Foundation [NSF EFMA-1640968]
- San Diego Nanotechnology Infrastructure (UCSD Nano3 cleanroom) [NSF ECCS-1542148]
- United States Department of Energy's National Nuclear Security Administration [DE-NA0003525]
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We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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