Few-layer Bi2Te3: an effective 2D saturable absorber for passive Q-switching of compact solid-state lasers in the 1-mu m region

An experimental investigation was carried out to evaluate the potential of few-layer Bi2Te3 topological insulator in use as a saturable absorber for passive Q-switching of compact solid-state lasers in the 1-mu m spectral region. By incorporating a sapphire-based few-layer Bi2Te3 sample into a Yb:LuPO4 laser that was formed with a 4-mm plane-parallel resonator, we realized efficient, high-power, high-repetition-rate pulsed laser operation. Depending on the output coupling utilized, single- or dual-wavelength laser action could be achieved. A maximum output power of 5.02 W at 1014.5 nm was produced at a pulse repetition rate of 1.67 MHz, with an optical-to-optical efficiency of 41% and a slope efficiency of 54%; while operating at 1004.9/1012.7 nm, the pulsed laser could produce an output power of 3.94 W at 1.38 MHz, with a pulse duration being as short as 34 ns. The largest pulse energy and highest peak power achieved were 3.0 mu J and 85.3 W. The results demonstrated in our experiment reveal the great potential of the few-layer Bi2Te3 topological insulator in the development of pulsed compact solid-state lasers in the 1-mu m region. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement