1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-mu m InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at similar to 1.27 mu m with a threshold current density of 194 A/cm(2) and output power of similar to 77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers. (C) 2014 Optical Society of America