Journal
OPTICS EXPRESS
Volume 22, Issue 12, Pages 15292-15297Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.22.015292
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Funding
- European Commission [285275]
- German Science Foundation DFG [SPP 1459 Graphene]
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Graphene is considered a promising material for broadband optoelectronics because of its linear and gapless band structure. Its optical conductivity can be significantly tuned electrostatically by shifting the Fermi level. Using mentioned property, we experimentally demonstrate a graphene based electro-absorption modulator with very low insertion loss. The device is realized on a silicon on insulator (SOI) waveguide operating at 1550 nm wavelength. The modulator shows a modulation depth of 16 dB and an insertion loss of 3.3 dB, surpassing GeSi and previous graphene based absorption modulators and being comparable to silicon Mach-Zehnder interferometer based modulators. (C)2014 Optical Society of America
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