Journal
OPTICS EXPRESS
Volume 22, Issue 10, Pages 12238-12247Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.22.012238
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Funding
- ARO [57981-PHW911NF-11-1-0359]
- NSF MRSEC [DMR-1120923]
- NSF PREM [DRM-0611430]
- Marie Curie Outgoing International Fellowship [329346]
- Otto Monsteds foundation
- Kaj og Hermilla Ostenfeld foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1205457] Funding Source: National Science Foundation
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An insulator-metal-insulator plasmonic interconnect using TiN, a CMOS-compatible material, is proposed and investigated experimentally at the telecommunication wavelength of 1.55 mu m. The TiN waveguide was shown to obtain propagation losses less than 0.8 dB/mm with a mode size of 9.8 mu m on sapphire, which agree well with theoretical predictions. A theoretical analysis of a solid-state structure using Si3N4 superstrates and ultra-thin metal strips shows that propagation losses less than 0.3 dB/mm with a mode size of 9 mu m are attainable. This work illustrates the potential of TiN as a realistic plasmonic material for practical solid-state, integrated nano-optic and hybrid photonic devices. (C) 2014 Optical Society of America
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