4.6 Article

Optical Kerr nonlinearity in a high-Q silicon carbide microresonator

Journal

OPTICS EXPRESS
Volume 22, Issue 25, Pages 30826-30832

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.22.030826

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Funding

  1. National Science Foundation [ECCS-1408517]
  2. Directorate For Engineering
  3. Div Of Electrical, Commun & Cyber Sys [1408517] Funding Source: National Science Foundation

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We demonstrate a high-Q amorphous silicon carbide (a-SiC) microresonator with optical Q as high as 1.3 x 10(5). The high optical quality allows us to characterize the third-order nonlinear susceptibility of a-SiC. The Kerr nonlinearity is measured to be n(2) = (5.9 +/- 0.7) x 10(-15) cm(2)/W in the telecom band around 1550 nm. The strong Kerr nonlinearity and high optical quality render a-SiC microresonators a promising platform for integrated nonlinear photonics. (C) 2014 Optical Society of America

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