Journal
OPTICS EXPRESS
Volume 22, Issue 3, Pages 2247-2258Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.22.002247
Keywords
-
Categories
Funding
- Science and Engineering Research Council
- A STAR (Agency for Science, Technology and Research), Singapore [092-154-0098]
- A GA for support under the NSS (BS) scheme
Ask authors/readers for more resources
We propose a novel technique of enhancing the photodetection capabilities of ultrathin Ge films for normally incident light at 1.55 mu m through the guided mode resonance (GMR) phenomenon. Specifically, by suitably patterning the surface of a Ge thin film, it is possible to excite guided modes which are subsequently coupled to free space radiative modes, resulting in spectral resonances that possess locally enhanced near fields with a large spatial extent. Absorption is found to be enhanced by over an order of magnitude over a pristine Ge film of equal thickness. Furthermore, attenuation of incident light for such a structure occurs over very few grating periods, resulting in significantly enhanced theoretical 3 dB bandwidth-efficiency products of similar to 58 GHz. The nature of the enhancement mechanism also produces spectrally narrow resonances (FWHM similar to 30 nm) that are polarization sensitive and exhibit excellent angular tolerance. Finally, the proposed device architecture is fully compatible with existing Si infrastructure and current CMOS fabrication processes. (C) 2014 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available