4.6 Article

Effect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO3:Yb/Er thin films

Journal

OPTICS EXPRESS
Volume 22, Issue 23, Pages 29014-29019

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.22.029014

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Funding

  1. Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P R China
  2. National Natural Science Foundation of China [51272218, 11374225, 11474241, 11404029]
  3. Fundamental Research Funds for the Central Universities [2014RC0906]
  4. Research Grants Council of Hong Kong [HKU 701813]

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Thin films of Yb3+/Er3+ co-doped BaTiO3 (BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3)(0.7)Ti0.3O3 (PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering. (C) 2014 Optical Society of America

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