Journal
OPTICS EXPRESS
Volume 22, Issue 12, Pages 14072-14086Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.22.014072
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Funding
- French ANR through the NOMADE project
- ERC through the GANOMS project
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We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the disk boundary and from the strain-induced refractive index changes in the material, for various mechanical modes of the disks. Photoelastic optomechanical coupling is shown to be a predominant coupling mechanism for certain disk dimensions and mechanical modes, leading to total coupling g(om) and g(0) reaching respectively 3 THz/nm and 4 MHz. Finally, we point towards ways to maximize the photoelastic coupling in GaAs disk resonators, and we provide some upper bounds for its value in various geometries. (C) 2014 Optical Society of America
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