4.6 Article

GaN-based light-emitting diodes on graphene-coated flexible substrates

Journal

OPTICS EXPRESS
Volume 22, Issue 9, Pages A812-A817

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.22.00A812

Keywords

-

Categories

Funding

  1. LG Innotek-Korea University Nano-Photonics Program
  2. Center for Inorganic Photovoltaic Materials - Korea government (MEST), a Korea University [2012-0001171]
  3. Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) by the Korea government Ministry of Trade, Industry and Energy [20124030200120]
  4. NSF [1159682]
  5. Directorate For Engineering
  6. Div Of Electrical, Commun & Cyber Sys [1159682] Funding Source: National Science Foundation

Ask authors/readers for more resources

We demonstrate GaN-based thin light-emitting diodes (LEDs) on flexible polymer and paper substrates covered with chemical vapor deposited graphene as a transparent-conductive layer. Thin LEDs were fabricated by lifting the sapphire substrate off by Excimer laser heating, followed by transfer of the LEDs to the flexible substrates. These substrates were coated with tri-layer graphene by a wet transfer method. Optical and electrical properties of thin laser lift-offed LEDs on the flexible substrates were characterized under both relaxed and strained conditions. The graphene on paper substrates remained conducting when the graphene/paper structure was folded. The high transmittance, low sheet resistance and high failure strain of the graphene make it an ideal candidate as the transparent and conductive layer in flexible optoelectronics. (C) 2014 Optical Society of America

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available