4.6 Article

50-Gb/s ring-resonator-based silicon modulator

Journal

OPTICS EXPRESS
Volume 21, Issue 10, Pages 11869-11876

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.21.011869

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Funding

  1. Japan Society for the Promotion of Science (JSPS)
  2. Council for Science and Technology Policy (CSTP)

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We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V pi L as small as 0.28 V.cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V-pp and 5.2 dB, respectively. (C) 2013 Optical Society of America

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