Journal
OPTICS EXPRESS
Volume 21, Issue 11, Pages 13219-13227Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.013219
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Funding
- DFG Center for Functional Nanostructures (CFN)
- Karlsruhe School of Optics and Photonics (KSOP)
- Karlsruhe International Research School on Teratronics (HIRST)
- Alfried Krupp von Bohlen und Halbach Foundation
- EU [248609]
- OTONES
- PHOXTROT
- BMBF joint project MISTRAL
- European Research Council (ERC) [280145]
- ePIXfab (silicon photonics platform)
- Karlsruhe Nano-Micro Facility (KNMF)
- Light Technology Institute (KIT-LTI)
- Deutsche Forschungsgemeinschaft
- Karlsruhe Institute of Technology
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Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electrooptic effect by functionalizing a photonic integrated circuit with an organic chi((2))-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit. (C) 2013 Optical Society of America
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