Journal
OPTICS EXPRESS
Volume 21, Issue 4, Pages 4908-4916Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.004908
Keywords
-
Categories
Ask authors/readers for more resources
We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form. (C) 2013 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available