Journal
OPTICS EXPRESS
Volume 21, Issue 1, Pages 867-876Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.000867
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Funding
- DARPA [HR0011-08-09-0001]
- Oracle
- SRC FCRP Interconnect Focus Center
- National Science Foundation
- Engineering and Physical Sciences Research Council [EP/F002548/1] Funding Source: researchfish
- EPSRC [EP/F002548/1] Funding Source: UKRI
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We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices. (C) 2013 Optical Society of America
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