The study of optical band edge property of bismuth oxide nanowires α-Bi2O3

The alpha-phase Bi2O3 (alpha-Bi2O3) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. The understanding on fundamental optical property of alpha-Bi2O3 is important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven with vapor- liquid-solid mechanism on Si substrate. High-resolution transmission electron microscopy and Raman measurement confirm a phase of monoclinic structure for the as-grown nanowires. The axial direction for the as-grown nanowires was along <<(1)over bar>22 >. The band-edge structure of alpha-Bi2O3 has been probed experimentally by thermoreflectance (TR) spectroscopy. The direct band gap was determined accurately to be 2.91 eV at 300 K. Temperaturedependent TR measurements of 30-300 K were carried out to evaluate temperature-energy shift and line-width broadening effect for the band edge of alpha-Bi2O3 thin-film nanowires. Photoluminescence (PL) experiments at 30 and 300 K were carried out to identify band-edge emission as well as defect luminescence for the alpha-Bi2O3 nanowires. On the basis of experimental analyses of TR and PL, optical characteristics of direct band edge of alpha-Bi2O3 nanowires have thus been realized. (C) 2013 Optical Society of America