Journal
OPTICS EXPRESS
Volume 21, Issue 13, Pages 15676-15685Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.015676
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Funding
- National Research Foundation of Singapore [NRF-CRP-6-2010-2, NRF-RF-2009-09]
- Singapore Agency for Science, Technology and Research (A*STAR) SERC [112 120 2009]
- National Natural Science Foundation of China (NSFC) [61006037, 61177014, 61076015]
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In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. (C) 2013 Optical Society of America
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