Journal
OPTICS EXPRESS
Volume 20, Issue 14, Pages 15093-15099Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.015093
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Funding
- National Basic Research Program of China [2011CB301701, 2012CB933502, 2012CB933504]
- Knowledge Innovation Program of the Chinese Academy of Sciences [KGCX2-EW-102]
- National Natural Science Foundation of China [61107048, 60877036]
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A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
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