Journal
OPTICS EXPRESS
Volume 20, Issue 11, Pages 12014-12020Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.012014
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Funding
- DARPA
- Air Force Office of Scientific Research
- Intel
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There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit. (c) 2012 Optical Society of America
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