Journal
OPTICS EXPRESS
Volume 20, Issue 6, Pages 6808-6815Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.006808
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Funding
- National High Technology Program of China [2011AA03A105, 2011AA03A103]
- National Natural Sciences Foundation of China [60806001]
- National Basic Research Program of China [2011CB301904]
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We report a multiple laser stealth dicing (multi-LSD) method to improve the light extraction efficiency (LEE) of InGaN-based light-emitting diodes (LEDs) using a picosecond (Ps) laser. Compared with conventional LEDs scribed by a nanosecond (Ns) laser and single stealth-diced LEDs, the light output power (LOP) of the LEDs using multi-LSD method can be improved by 26.5% and 11.2%, respectively. The enhanced LOP is due to the increased side emission from the large-area roughened sidewalls of the sapphire substrates fabricated in the multi-LSD process. Numerical simulation results show that the multi-LSD process has little thermal damages to the multiple quantum wells (MQWs) of the LEDs. (C) 2012 Optical Society of America
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