Journal
OPTICS EXPRESS
Volume 20, Issue 11, Pages 12171-12176Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.012171
Keywords
-
Categories
Funding
- Defense Advanced Research Projects Agency [HR0011-04-1-0040]
- Microelectronics Advanced Research Corp Interconnect Focus Center
- Department of Defense National Security Science and Engineering Faculty
- Chang Jiang Scholar Endowed Chair at Tsinghua University, China
- Li Ka Shing Foundation
Ask authors/readers for more resources
We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 degrees C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-temperature operation of optically pumped lasers is also achieved. To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip, serving as a proof-of-concept that such integration can be extended to more complicated CMOS integrated circuits. (C) 2012 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available