Journal
OPTICS EXPRESS
Volume 20, Issue 2, Pages 1096-1101Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.001096
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- European Community [224312 HELIOS]
- French ANR
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We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 mu m long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 mu m. (C)2012 Optical Society of America
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