4.6 Article

THz generation using extrinsic photoconductivity at 1550 nm

Journal

OPTICS EXPRESS
Volume 20, Issue 15, Pages 16504-16509

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.20.016504

Keywords

-

Categories

Funding

  1. Wright State University through Ohio Board of Regents
  2. Center for Surveillance Research at the Ohio State University - a consortium of U.S. Air Force
  3. NSF

Ask authors/readers for more resources

1550-nm pulses from a fiber-mode-locked laser are used to drive an ErAs: GaAs photoconductive switch, resulting in easily measured THz radiation with average broadband (similar to 0.1 to 1.0 THz) power of approximate to 0.1 mW. The new THz switching mechanism is attributed to fast extrinsic photoconductivity that generates photocarriers (probably electrons) from the ErAs nanoparticles embedded in the material with a lifetime of similar to 0.45 ps (354 GHz bandwidth). This is the first known demonstration of useful THz power generation by extrinsic photoconductivity. (C) 2012 Optical Society of America

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available