4.6 Article

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes

Journal

OPTICS EXPRESS
Volume 20, Issue 5, Pages 5689-5695

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.20.005689

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Funding

  1. National Science Council [NSC 97-2221-E-006-242-MY3]
  2. Center for Frontier Materials and Micro/Nano Science and Technology
  3. Advanced Optoelectronic Technology Center of the National Cheng Kung University

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The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface. (c) 2012 Optical Society of America

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