4.6 Article

Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films

Journal

OPTICS EXPRESS
Volume 20, Issue 23, Pages A991-A996

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.20.00A991

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Funding

  1. Ministry of Education
  2. National Research Foundation of Korea (NRF)
  3. Korea government (MEST) [20120002256]
  4. Korea Institute of Industrial Technology(KITECH) [B0000059] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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InGaN based MQW solar cells have been fabricated with 4 different transparent top electrode structures: (1)- ITO 200 nm, (2)-ITO nano dots only, (3)-ITO nano dots on ITO 50 nm and (4)-ITO nano dots on ITO 100 nm. The solar cell with the ITO 50 nm on ITO nano dots under AM 1.5 conditions showed the best results: 2.3 V for V-oc, 0.69 mA/cm(2) for J(sc), 41.8% for peak EQE, and 0.91% for conversion efficiency. Efficiency improvement was possible due to the decreased reflectance achieved by the ITO nano dots covered with an ITO film with optimized thickness. (C) 2012 Optical Society of America

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