Journal
OPTICS EXPRESS
Volume 20, Issue 26, Pages B315-B321Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.00B315
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Funding
- Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, through the Project for Developing Innovation Systems,
- Intel Corporation
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An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 mu m at room temperature, with a threshold current density of 480 A cm(-2). (C)2012 Optical Society of America
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