Journal
OPTICS EXPRESS
Volume 20, Issue 28, Pages 29164-29173Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.20.029164
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Funding
- DARPA [HR0011-08-09-0001]
- Semiconductor Research Corporation Interconnect Focus Center
- Stanford Graduate Fellowship program
- National Science Foundation [ECS-9731293]
- US Government
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We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 mu m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization. (C) 2012 Optical Society of America
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