4.6 Article

170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits

Journal

OPTICS EXPRESS
Volume 20, Issue 18, Pages 20090-20095

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.20.020090

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Funding

  1. European Commission [257539]
  2. Engineering and Physical Sciences Research Council (EPSRC) [EP/J017671/1]
  3. Fundacion Caja Madrid
  4. EPSRC [EP/J017671/1, EP/H012907/1] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [EP/H012907/1, EP/J017671/1] Funding Source: researchfish

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We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications. (C) 2012 Optical Society of America

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