Journal
OPTICS EXPRESS
Volume 19, Issue 25, Pages 24897-24904Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.024897
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Funding
- Sandias Laboratory
- Department of Defense
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
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We present a compact 1.3 x 4 mu m(2) Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications. (C) 2011 Optical Society of America
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