Journal
OPTICS EXPRESS
Volume 19, Issue 7, Pages 5811-5816Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.005811
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- Intel
- DARPA/MTO PICO Center
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We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 mu m active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits. (c) 2011 Optical Society of America
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