Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions

10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. V pi L pi of about 2.5 V x cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB. (C) 2011 Optical Society of America