4.6 Article

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Journal

OPTICS EXPRESS
Volume 19, Issue 26, Pages 385-390

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.19.00B385

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Funding

  1. DARPA
  2. Naval Research Laboratory

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We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias. (C)2011 Optical Society of America

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