Journal
OPTICS EXPRESS
Volume 19, Issue 7, Pages 6284-6289Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.006284
Keywords
-
Categories
Funding
- NSF [NSF DMR-0520404]
- University of California, Davis [HR0011-09-0013]
- Stanford University [FA9550-05-1-0414]
- Agency of Science, Technology and Research (A*STAR), Singapore
Ask authors/readers for more resources
We demonstrate high quality factor etchless silicon photonic ring resonators fabricated by selective thermal oxidation of silicon without the silicon layer being exposed to any plasma etching throughout the fabrication process. We achieve a high intrinsic quality factor of 510,000 in 50 mu m-radius ring resonators, corresponding to a ring loss of 0.8 dB/cm. The device has a total chip insertion loss of 2.5 dB, achieved by designing etchless silicon inverse nanotapers at both the input and output of the chip. (C) 2011 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available