Journal
OPTICS EXPRESS
Volume 19, Issue 11, Pages 10462-10470Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.010462
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Funding
- NSF
- Packard Foundation
- DARPA/MTO [W911NF-09-1-410]
- Alexander-von-Humboldt foundation
- DARPA
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0846919] Funding Source: National Science Foundation
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We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The chi(2) nonlinear susceptibility is measured to be as high as 16 +/- 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of chi(2) enabled sum-/difference-frequency processes. (C) 2011 Optical Society of America
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