Related references
Note: Only part of the references are listed.A numerical study of Auger recombination in bulk InGaN
Francesco Bertazzi et al.
APPLIED PHYSICS LETTERS (2010)
Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
Kyu Sang Kim et al.
APPLIED PHYSICS LETTERS (2010)
Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes
N. I. Bochkareva et al.
APPLIED PHYSICS LETTERS (2010)
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
J. Hader et al.
APPLIED PHYSICS LETTERS (2010)
Efficiency droop in nitride-based light-emitting diodes
Joachim Piprek
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes
Jun Ho Son et al.
OPTICS EXPRESS (2010)
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
Umit Ozgur et al.
PROCEEDINGS OF THE IEEE (2010)
High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes
Lei Wang et al.
APPLIED PHYSICS LETTERS (2009)
Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates
Y. Yang et al.
APPLIED PHYSICS LETTERS (2009)
Auger recombination rates in nitrides from first principles
Kris T. Delaney et al.
APPLIED PHYSICS LETTERS (2009)
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Q. Dai et al.
APPLIED PHYSICS LETTERS (2009)
Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
Sang-Heon Han et al.
APPLIED PHYSICS LETTERS (2009)
Current Status of GaN-Based Solid-State Lighting
Shuji Nakamura
MRS BULLETIN (2009)
On the importance of radiative and Auger losses in GaN-based quantum wells
J. Hader et al.
APPLIED PHYSICS LETTERS (2008)
Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes
Aurelien David et al.
APPLIED PHYSICS LETTERS (2008)
Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
N. F. Gardner et al.
APPLIED PHYSICS LETTERS (2007)
Defect related issues in the current roll-off in InGaN based light emitting diodes
B. Monemar et al.
APPLIED PHYSICS LETTERS (2007)
Auger recombination in InGaN measured by photoluminescence
Y. C. Shen et al.
APPLIED PHYSICS LETTERS (2007)
Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
Katsushi Akita et al.
JOURNAL OF APPLIED PHYSICS (2007)
Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
A Hangleiter et al.
PHYSICAL REVIEW LETTERS (2005)
Solid-state light sources getting smart
EF Schubert et al.
SCIENCE (2005)
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
IA Pope et al.
APPLIED PHYSICS LETTERS (2003)
Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes
A Hori et al.
APPLIED PHYSICS LETTERS (2001)