Journal
OPTICS EXPRESS
Volume 19, Issue 23, Pages 23111-23117Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.023111
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Funding
- Basic science Research Laboratory through the National Research Foundation of Korea (NRF) [BRL: 2010-0019694]
- Ministry of Education, Science and Technology
- WCU (World Class University) through the NRF
- MEST [R31-2008-10029]
- National Research Foundation of Korea [2010-0019694] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report GaN-based near ultraviolet (UV) light emitting diode (LED) that combines indium tin oxide (ITO) nanodot nodes with two-dimensional graphene film as a UV-transparent current spreading electrode (TCSE) to give rise to excellent UV emission efficiency. The light output power of 380 nm emitting UV-LEDs with graphene film on ITO nanodot nodes as TCSE was enhanced remarkably compared to conventional TCSE. The increase of the light output power is attributed to high UV transmittance of graphene, effective current spreading and injection, and texturing effect by ITO nanodots. (C) 2011 Optical Society of America
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