Journal
OPTICS EXPRESS
Volume 19, Issue 15, Pages 14662-14670Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.19.014662
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Funding
- National Science Council of Taiwan, R.O.C. [NSC 97-2221-E-006-237-MY3]
- Chi Mei Lighting Technology Company
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A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure. (C) 2011 Optical Society of America
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