Journal
OPTICS EXPRESS
Volume 18, Issue 19, Pages A286-A292Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.00A286
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Funding
- MKE, Korea [2009T100100614]
- MEST [2009-0082820]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20093021010021] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0083007, 과C6A2605] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Vertically aligned silicon nanowires (SiNWs) were cost-effectively formed on a four-inch silicon wafer using a simple room temperature approach, i.e., metal-assisted electroless etching. Tapering the NWs by post-KOH dipping achieved separation of each NW from the bunched NW, resulting in a strong enhancement of broadband optical absorption. As electroless etching time increases, the optical crossover feature was observed in the tradeoff between enhanced light trapping (by graded-refractive index during initial tapering) and deteriorated reflectance (by decreasing the areal density of NWs during later tapering). Compared to the bunched SiNWs, tapered NW solar cells demonstrated superior photovoltaic characteristics, such as a short circuit current of 17.67 mA/cm(2) and a cell conversion efficiency of similar to 6.56% under 1.5 AM illumination. (C) 2010 Optical Society of America
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