Journal
OPTICS EXPRESS
Volume 18, Issue 25, Pages 25999-26006Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.025999
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Funding
- University of Dayton Research Institiute [RSC 09011]
- Materials and Manufacturing Directorate of AFRL [FA8650-06-D-5401/0013]
- National Science Foundation [DMR-0116098, EPS-0814103, ECCS-0901376]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0901376] Funding Source: National Science Foundation
- EPSCoR
- Office Of The Director [1010607] Funding Source: National Science Foundation
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We demonstrate 2.6 mu m mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+: ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 mu m. (C) 2010 Optical Society of America
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