4.6 Article

Room-temperature electroluminescence from Si microdisks with Ge quantum dots

Journal

OPTICS EXPRESS
Volume 18, Issue 13, Pages 13945-13950

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.18.013945

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Funding

  1. project for strategic advancement of research infrastructure for private universities
  2. MEXT, Japan [21246003]
  3. Grants-in-Aid for Scientific Research [21246003] Funding Source: KAKEN

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A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations. (C) 2010 Optical Society of America

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