Journal
OPTICS EXPRESS
Volume 18, Issue 6, Pages 5466-5471Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.005466
Keywords
-
Categories
Funding
- Ministry of Education, Science and Technology [2009-0094037, R31-2008-000-10059-0]
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10059-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0094037, 2005-005-J13102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We present a method of increasing light output power and suppressing efficiency droop in vertical-structure InGaN/GaN MQW LEDs without modifying their epitaxial layers. These improvements are achieved by reducing the quantum-confined Stark effect (QCSE) by reducing piezoelectric polarization that results from compressive stress in the GaN epilayer. This compressive stress is relaxed due to the external stress induced by an electro-plated Ni metal substrate. In simulations, the severe band bending in the InGaN quantum well is reduced and subsequently internal quantum efficiency increases as the piezoelectric polarization is reduced. (C) 2010 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
