4.6 Article

Ligand capping effect for dye solar cells with a CdSe quantum dot sensitized ZnO nanorod photoanode

Journal

OPTICS EXPRESS
Volume 18, Issue 2, Pages 1296-1301

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.18.001296

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Funding

  1. Nanyang Technological University [RGM 44/06]
  2. National Science Foundation of China [50872022]
  3. Ministry of Education [20030286003]
  4. Program for New Century Excellent Talents in University, Natural Science Foundation of the Jiangsu Higher Education Institutions of China [2009102TSJ0122]
  5. Scientific Research Foundation of Graduate School of Southeast University [YBJJ0927]

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We report a quantum dot sensitized solar cell (QDSSC) with a thioglycolic acid (TGA) capped CdSe quantum dot (QD) sensitized ZnO nanorod photoanode. As revealed by UV-Vis absorption spectrum and transmission electron microscopy, the quantum dots can be effectively adsorbed onto ZnO nanorods. By studying the emission decay, the quenching of the CdSe QDs by ZnO nanorod was verified, and an electron transfer (from QD to ZnO) rate constant of 1 x 10(8) s(-1) was obtained. The efficiency of the as-prepared QDSSC was 0.66% and an incident power conversion efficiency of 22% at 400 nm was achieved. (C) 2010 Optical Society of America

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