Journal
OPTICS EXPRESS
Volume 18, Issue 3, Pages 2729-2742Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.002729
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Funding
- National Science Council of the Republic of China [NSC-97-2221-E-006-238-MY3]
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GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2 degrees tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0 degrees tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency. (C) 2009 Optical Society of America
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