Journal
OPTICS EXPRESS
Volume 18, Issue 24, Pages 25241-25249Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.18.025241
Keywords
-
Categories
Funding
- Ministry of Education of the Czech Republic [LC 510, MSM0021620834]
- Charles University in Prague (GA UK) [17808, 73910, SVV-2010-26130]
- GAAV [IAA101120804]
- institutional Research Plan [AV0Z 10100521]
- KAN [400100701]
- EPSRC
- ONE
Ask authors/readers for more resources
We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation. (C) 2010 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available