4.6 Article

Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications

Journal

OPTICS EXPRESS
Volume 17, Issue 22, Pages 19371-19381

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.17.019371

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  1. USC Provost

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In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100nm to 600nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600nm and wire diameter of 540nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles. (c) 2009 Optical Society of America

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