Journal
OPTICS EXPRESS
Volume 17, Issue 25, Pages 22505-22513Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.17.022505
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We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (mu W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity. (C) 2009 Optical Society of America
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