Journal
OPTICS EXPRESS
Volume 17, Issue 11, Pages 9337-9346Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.17.009337
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Funding
- Grant-in-Aid for Scientific Research
- Japan Society of Promotion of Science (JSPS)
- National Natural Science Foundation of China [60877015, 90604001]
- National High Technology Research and Development Program of China [2007AA03Z420]
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We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111) B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Perot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Perot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field. (C) 2009 Optical Society of America
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