Journal
OPTICS EXPRESS
Volume 16, Issue 22, Pages 18340-18344Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.16.018340
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Funding
- National IT Industry Promotion Agency (NIPA), Republic of Korea [A1100-0802-0109] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of similar to 8 GHz and the data transmission up to 12.5Gbit/s. (C) 2008 Optical Society of America
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